Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells
Identifieur interne : 002633 ( Chine/Analysis ); précédent : 002632; suivant : 002634Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells
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Abstract
A series of In0.14Ga0.86As/GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width, and intensity change of PL spectroscopy, critical layer thickness has been identified. The critical layer thickness obtained for MOCVD-grown material was found in agreement with theoretical value, but is smaller than material grown by molecular beam epitaxy. © 1995 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells</title><author><name sortKey="Zhang, Xiaobo" uniqKey="Zhang X">Xiaobo Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engneering and National Laboratory for Integrated Optoelectronics, Jilin University, Changchun 130023, China</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrical Engneering and National Laboratory for Integrated Optoelectronics, Jilin University, Changchun 130023</wicri:regionArea><placeName><settlement type="city">Changchun</settlement><region type="province">Jilin</region><region type="groupement">Dongbei</region></placeName></affiliation></author><author><name sortKey="Briot, Olivier" uniqKey="Briot O">Olivier Briot</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Groupe d'etude des Semiconducteurs, University of Montpellier, 34900 Montpellier, France</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d'etude des Semiconducteurs, University of Montpellier, 34900 Montpellier</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Gil, Bernard" uniqKey="Gil B">Bernard Gil</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Groupe d'etude des Semiconducteurs, University of Montpellier, 34900 Montpellier, France</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d'etude des Semiconducteurs, University of Montpellier, 34900 Montpellier</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Aulombard, Roger" uniqKey="Aulombard R">Roger Aulombard</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Groupe d'etude des Semiconducteurs, University of Montpellier, 34900 Montpellier, France</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d'etude des Semiconducteurs, University of Montpellier, 34900 Montpellier</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0534344</idno><date when="1995-11-01">1995-11-01</date><idno type="stanalyst">PASCAL 95-0534344 AIP</idno><idno type="RBID">Pascal:95-0534344</idno><idno type="wicri:Area/Main/Corpus">01BD00</idno><idno type="wicri:Area/Main/Repository">01B557</idno><idno type="wicri:Area/Chine/Extraction">002633</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. Appl. Phys.</title><title level="j" type="main">Journal of Applied Physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term><term>Experimental study</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Molecular beam epitaxy</term><term>Photoluminescence</term><term>Quantum wells</term><term>Strains</term><term>Thickness</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>6865</term><term>8115G</term><term>CVD</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Epitaxie jet moléculaire</term><term>Photoluminescence</term><term>Puits quantique</term><term>Déformation mécanique</term><term>Epaisseur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A series of In<sub>0.14</sub>Ga<sub>0.86</sub>As/GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width, and intensity change of PL spectroscopy, critical layer thickness has been identified. The critical layer thickness obtained for MOCVD-grown material was found in agreement with theoretical value, but is smaller than material grown by molecular beam epitaxy. © 1995 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. Appl. Phys.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (Xiaobo)</s1></fA11><fA11 i1="02" i2="1"><s1>BRIOT (Olivier)</s1></fA11><fA11 i1="03" i2="1"><s1>GIL (Bernard)</s1></fA11><fA11 i1="04" i2="1"><s1>AULOMBARD (Roger)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engneering and National Laboratory for Integrated Optoelectronics, Jilin University, Changchun 130023, China</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Groupe d'etude des Semiconducteurs, University of Montpellier, 34900 Montpellier, France</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>5490-5492</s1></fA20><fA21><s1>1995-11-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0534344</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of Applied Physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A series of In<sub>0.14</sub>Ga<sub>0.86</sub>As/GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width, and intensity change of PL spectroscopy, critical layer thickness has been identified. The critical layer thickness obtained for MOCVD-grown material was found in agreement with theoretical value, but is smaller than material grown by molecular beam epitaxy. © 1995 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6865</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>CVD</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>CVD</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Puits quantique</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Quantum wells</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Déformation mécanique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Strains</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Epaisseur</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Thickness</s0></fC03><fN21><s1>302</s1></fN21><fN47 i1="01" i2="1"><s0>9520M0482</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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